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以氧化硅粉体为载体,用非均匀成核法制备了锑掺杂氧化锡(antimony-doped tin oxide,ATO)包覆氧化硅导电粉。用电阻测试仪、场发射扫描电镜和能谱仪对粉体进行了表征。结果表明:包覆物加入量由二氧化硅用量的12.5%增加到100%时,包覆层厚度也从110nm增加到600nm。ATO包覆氧化硅粉体的电阻率随处理温度升高的变化趋势与同条件下制备的ATO基本一致,其中包覆物加入量为100%,75%,50%的ATO包覆氧化硅粉在500～1200℃热处理后的电阻率低于200Ω·cm,1100℃热处理后的25%包覆物加入量粉体的电阻率仅为99.9Ω·cm。包覆物加入量为12.5%的包覆粉体的电阻率由1100℃处理后的120.6Ω·cm上升到1200℃处理后的超过20MΩ·cm,这是因为包覆层较薄,在高温处理过程中包覆层上颗粒长大并收缩而使包覆层受到破坏。
Antimony-doped tin oxide (ATO) coated silicon oxide conductive powder was prepared by heterogeneous nucleation method using silica powder as carrier. The powder was characterized by resistance tester, field emission scanning electron microscope and energy dispersive spectrometer. The results showed that the coating thickness increased from 110nm to 600nm when the amount of coating increased from 12.5% to 100%. The change trend of resistivity of ATO-coated silica powder with the increase of treatment temperature is basically the same as that of ATO prepared under the same conditions. The ATO-coated silica powder with 100%, 75% and 50% The resistivity after heat treatment at 500-1200 ℃ is less than 200Ω · cm. The resistivity of 25% coating powder after heat treatment at 1100 ℃ is only 99.9Ω · cm. The electrical resistivity of the coated powder with 12.5% coating increased from 120.6 Ω · cm at 1100 ℃ to more than 20MΩ · cm at 1200 ℃ after treatment because the coating was thin and treated at high temperature During the process, the particles grow and shrink on the coating and the coating is destroyed.