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采用RF反应溅射法在Si(1 1 1 )、玻璃衬底上制备了具有良好C轴取向的多晶ZnO薄膜。用XRD分析了沉积条件 (衬底温度、工作气体中的氧与氩气压比和衬底种类 )对样品结构的影响。发现 (1 )薄膜的取向性随着衬底温度的升高而增强 ,超过40 0℃后薄膜质量开始变差 ;(2 )工作气体中氧与氩气压比 (PO2 PAr)为 2 :3时 ,薄膜取向性最好 ;(3)薄膜晶粒尺寸 1 1～ 34nm ,相同沉积条件下 ,单晶硅衬底样品 (0 0 2 )衍射峰强度减弱 ,半高宽无明显变化。
A polycrystalline ZnO thin film with good C-axis orientation was prepared on Si (111) glass substrate by RF reactive sputtering. The influence of deposition conditions (substrate temperature, oxygen to argon pressure ratio in the working gas and substrate type) on the sample structure was analyzed by XRD. The results show that (1) the orientation of the film increases with increasing substrate temperature, and the film quality begins to deteriorate after more than 400 ℃. (2) When the oxygen to argon pressure ratio (PO2 PAr) in the working gas is 2: 3 (3) The grain size of the film is 1 1 ~ 34nm. Under the same deposition conditions, the diffraction peak intensity of the (0 0 2) single-crystal Si substrate is weakened, while the FWHM has no obvious change.