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介绍了一种高性能CMOS带隙基准电压源及电流源电路,基准电压源使用两个二极管串联结构来减小运放失调影响结果的系数,同时采用大尺寸器件减小运放的失调;采用共源共栅电流镜提供偏置电流来减小沟道长度调制效应带来的影响;在此基准电压源的基础上,利用正温度系数电流与负温度系数电流求和补偿的方法,设计了一种基准电流源。使用CSMC公司0.5μm CMOS工艺模型,利用Spectre工具对其仿真,结果显示:电源电压为5 V,在-40～85℃的温度范围内,基准电压源温度系数为20.4×10-6/℃,直流电源抑制比为1.9 mV/V,电流源温度系数为27.3×10-6/℃,电源抑制比为57 dB。
A high-performance CMOS bandgap voltage reference and current source circuit are introduced. The reference voltage source uses two diode series structures to reduce the effect of op amp offset. The large-size device is used to reduce the operational amplifier offset. The cascode current mirror provides the bias current to reduce the influence of the channel length modulation effect. On the basis of the reference voltage source, the positive temperature coefficient current and the negative temperature coefficient current summation compensation are designed A reference current source. Using CSMC’s 0.5μm CMOS process model and the simulation with Specter, the simulation results show that the power supply voltage is 5 V, the temperature coefficient of the reference voltage is 20.4 × 10-6 / ℃ in the temperature range of -40 ~ 85 ℃, DC power supply rejection ratio of 1.9 mV / V, current source temperature coefficient of 27.3 × 10-6 / ℃, power supply rejection ratio of 57 dB.