随着研究生产高质量HgCdTe晶体的工作日益增多,HgCdTe作红外探测器材料用的潜力正在被越来越多的认识到。因为存在高的汞蒸汽压、大的熔体分凝效应,以及晶体的密度会随熔体组分的变化而发生很大的改变,所以生长块状晶体总是要遇到一些特别困难的问题(图1)。尽管存在这些特殊的困难,用常规的方法还是能够生长出直 With the growing research into the production of high quality HgCdTe crystals, the potential of HgCdTe as an infrared detector material is increasingly recognized. Because of the high mercury vapor pressure, the large melt segregation effect and the density of the crystals, which vary greatly with the melt composition, there are always some particularly difficult problems with growing a bulk crystal (figure 1). In spite of these particular difficulties, it is still possible to grow straight using conventional methods