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基于延展波长(截止波长2.2μm)InGaAs-PIN光电探测器进行了失配异质结构InxGa1-xAs(x=0.72)/InP的MOCVD外延生长研究。采用宽带隙组分梯度渐变的InAlAs作为缓冲层和顶层,通过生长优化,获得了满足器件要求的外延材料。
InGaAs-PIN photodetectors were used to investigate MOCVD epitaxial growth of a mismatched InxGa1-xAs (x = 0.72) / InP based on an extended wavelength (cutoff wavelength of 2.2 μm). The InAlAs with gradient composition of wide bandgap component is used as the buffer layer and the top layer. Through the optimization of growth, the epitaxial material satisfying the requirements of the device is obtained.