实验研究了Ag_xSb_yO_z/SiO_2催化剂上AES分析中的荷电效应与电子束入射能量之间的关系,表明:改变入射电子束能量,可使催化剂表面发生正,负荷电状态的转化。适当选取入射电子束能量,使其略低于临界入射能量E~0p,催化剂处于略正荷电状态,有助于该类催化剂的AES和SAM分析。而真实AES峰能量可在入射电子束能量为E~0p时获 The relationship between charge effect and electron beam incident energy in AES analysis on Ag_xSb_yO_z / SiO_2 catalyst was experimentally investigated. It is shown that changing the incident electron beam energy can convert the positive and negative charge states of the catalyst surface. Proper selection of incident electron beam energy, which is slightly lower than the critical incident energy E ~ 0p, the catalyst in a slightly positive charge state, contribute to the type of catalyst AES and SAM analysis. The true AES peak energy is obtained when the incident electron beam energy is E ~ 0p