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综述了近年来MOSFET的热载流子效应和可靠性问题 ,总结了几种热载流子 ,并在此基础上详细讨论了热载流子注入 (HCI)引起的退化机制。对器件寿命预测模型进行了总结和讨论。为MOSFET热载流子效应可靠性研究奠定了基础
In this paper, the hot carrier effect and reliability of MOSFET are reviewed in this paper. Several hot carriers are summarized. On the basis of this, the degradation mechanisms caused by hot carrier injection (HCI) are discussed in detail. The device life prediction model is summarized and discussed. Which laid the foundation for the study of MOSFET hot carrier effect reliability