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为保护绝缘栅双极晶体管(IGBT)测试电路及芯片失效信息,提出了一种新型的无损IGBT短路安全工作区测试电路,可以在器件测试时根据测试电流、电压波形特征,自动识别IGBT是否发生失效。一旦被测器件在测试过程中发生失效,测试电路能够立即自动将电流旁路,保护芯片表面不受二次大电流破坏,进而保护芯片失效信息,为芯片的失效分析提供依据。根据设计搭建了测试保护电路,并进行实验比较。通过分析对比失效IGBT模块及芯片内部结构,发现该新型测试电路能在IGBT失效后,保护被测IGBT芯片不被进一步破坏,为失效分析提供充分依据。
In order to protect IGBT test circuit and chip failure information, a new type of non-destructive IGBT short-circuit safe working area test circuit is proposed, which can automatically identify whether IGBTs occur according to the characteristics of test current and voltage during device testing Failure. Once the device under test fails during the test, the test circuit can automatically and immediately bypass the current to protect the surface of the chip from being damaged by the secondary large current, thereby protecting the chip failure information and providing a basis for the failure analysis of the chip. According to the design to build a test protection circuit, and experimental comparison. By analyzing and comparing the failed IGBT module and the internal structure of the chip, it is found that the new test circuit can protect the tested IGBT chip from being further damaged after the IGBT fails and provide a sufficient basis for the failure analysis.