论文部分内容阅读
晶粒生长的显微结构的演化是一种受诸多因素影响的复杂过程。前文已简述模拟二维正常晶粒生长所采用的基本蒙特卡罗（ＭｏｎｔｅＣａｒｌｏ）方法。异常晶粒生长的最直接原因是总体系能的改变。而导致体系能变化的因素很多。本文在重点分析由于晶界能和迁移率的各向异性引起体系能量变化的基础上，介绍模拟异常晶粒生长的基本方法，为解决如何将实际生长环境复杂性引入生长模型中及如何进一步模拟生长的问题提供重要思路。
The evolution of the microstructure of grain growth is a complicated process influenced by many factors. The basic Monte Carlo method used to simulate two-dimensional normal grain growth has been outlined above. The most direct reason for the abnormal grain growth is the total system energy change. The factors that can change the system are many. This paper focuses on the analysis of the changes of energy due to the anisotropy of grain boundary energy and mobility, and introduces the basic methods of simulating the abnormal grain growth. In order to solve the problem of how to introduce the complexity of the actual growth environment into the growth model and how to further simulate The issue of growth provides important ideas.