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采用新的薄膜转移工艺,成功制备了128×128规模的高架桥式电阻阵。电阻阵的单元尺寸为50μm×50μm,占空比50%。初步测试了该高架桥电阻阵的两个基本指标,微桥的热时间常数和最高等效黑体温度,并对该电阻阵进行了成像实验。采用电学法测试单个微桥的时间常数τ约为4.5 ms,可在100Hz下工作。将整个面阵点亮,在8~12μm波段最高等效黑体温度达到250℃,推测在3~5μm波段最高等效黑体温度超过300±20℃。将整个器件全部点亮并驱动到最高温度时,器件的最大功率为30 W。该电阻阵可成功实现驱动显示成像。测试结果表明该高架桥式电阻阵初步满足红外景象产生器的要求。
With the new thin film transfer technology, a 128 × 128 Viaduct resistive array was successfully fabricated. The resistance matrix has a cell size of 50 μm × 50 μm and a duty ratio of 50%. Two basic indexes of the viaduct resistivity array, the thermal time constant of the micro-bridge and the highest equivalent blackbody temperature were tested. The imaging experiment of the resistivity array was carried out. The time constant τ of a single micro-bridge using the electrical method is about 4.5 ms and can work at 100 Hz. The whole area array is lighted, the highest equivalent blackbody temperature reaches 250 ℃ in 8 ~ 12μm band, and the highest equivalent blackbody temperature in the range of 3 ~ 5μm is estimated to exceed 300 ± 20 ℃. When the entire device is lit and driven to its maximum temperature, the maximum power of the device is 30 W. The resistor array can successfully drive the display imaging. The test results show that the viaduct resistive array initially meet the requirements of the infrared scene generator.