【摘 要】
：
Based on a tight-binding disordered model describing a single electron band, we establish a direct current (dc) electronic hopping transport conductance model o
【机 构】
：
Physics School of Science and Technology,Central South University,Changsha 410083,China
论文部分内容阅读
Based on a tight-binding disordered model describing a single electron band, we establish a direct current (dc) electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm’s law conductivity.
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