一、前言众所周知,硅一旦受到热氧化,晶体内部就会导入堆垛层错、位错环以及析出等晶格缺陷,而且这些缺陷能使器件变坏。因此,随着集成电路的高密度化、大规模化的进展,控制那些对成品率等有直接影响的氧化工艺中产生的缺陷就成为重要的课题。现在,正从两方面进行研究,即从晶体生长技术方面研究如何控制生长过程中微小缺陷的产生;又从器件制造技术方面研究怎样用吸收法消除堆垛层错成核。本文对用吸收法控制缺陷产生的方法进行论述。到目前为止,已经提出了各种吸收方法,例如,向片子背面扩散高浓度磷使之产生 I. Preface As we all know, once the silicon is thermally oxidized, the crystal will be imported within the stacking faults, dislocation loops and precipitation lattice defects, and these defects can make the device worse. Therefore, as integrated circuits have been densified and large-scale progresses, it becomes an important issue to control defects that occur in the oxidation process, which have a direct effect on the yield and the like. Now, from two aspects of research, from the crystal growth technology to study how to control the growth of micro-defects in the production process; from the device manufacturing technology to study how to use absorption method to eliminate stacking fault stagnation nucleation. This article discusses the method of using absorption method to control defects. So far, various absorption methods have been proposed, for example, diffusing high-concentration phosphorus to the back of the film to make it