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InAlN/GaN high-electron-mobility transistors(HEMTs) on SiC substrate were fabricated and characterized.Several techniques,consisting of high electron density,70 nm T-shaped gate,low ohmic contacts and a short drain-source distance,are integrated to gain high device performance.The fabricated InAlN/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/mm at V_(gs) = 1 V and a maximum peak transconductance of 382 mS/mm.In addition,a unity current gain cut-off frequency(f_T) of 162 GHz and a maximum oscillation frequency(f_(max)) of 176 GHz are achieved on the devices with the 70 nm gate length.
Sealing techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to high-electron-mobility transistors (HEMTs) on SiC substrates were fabricated and characterized gain high device performance.The fabricated InAlN / GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A / mm at Vgs (gs) = 1 V and a maximum peak transconductance of 382 mS / mm. In addition, a unity current gain cut -off frequency (f_T) of 162 GHz and a maximum oscillation frequency (f_ (max)) of 176 GHz are achieved on the devices with the 70 nm gate length.