【摘 要】
：
建立Ⅲ-Ⅴ族三元化合物半导体材料的分子束外延生长热力学模型。该模型与实验材料InGaP/GaAs,InGaAs/InP及已发表的GaAsP/GaAs,InAsP/InP的数据吻合得很好。将晶格应变能△G
【机 构】
：
南开大学弱光非线性光子学教育部重点实验室,
【出 处】
：
Transactions of Nonferrous Metals Society of China
论文部分内容阅读
建立Ⅲ-Ⅴ族三元化合物半导体材料的分子束外延生长热力学模型。该模型与实验材料InGaP/GaAs,InGaAs/InP及已发表的GaAsP/GaAs,InAsP/InP的数据吻合得很好。将晶格应变能△G及脱附对温度敏感这两个因素同时纳入热力学模型中,束流和生长温度直接影响合金组分,晶格应变能是合金组分的函数。热力学模型计算结果反映了束流和生长温度是生长过程中最主要的影响因素。讨论和分析了四元半导体材料InGaAsP/GaAs的热力学生长模型。
The thermodynamic model of III-V ternary compound semiconductor material was established by molecular beam epitaxy. The model is in good agreement with the experimental data of InGaP / GaAs, InGaAs / InP and published GaAsP / GaAs, InAsP / InP data. The lattice strain energy △ G and the desorption temperature-sensitive two factors simultaneously into the thermodynamic model, the beam current and the growth temperature directly affect the alloy composition, the lattice strain energy is a function of the alloy composition. Thermodynamic model results show that the beam current and growth temperature are the most important factors in the growth process. The thermodynamic growth model of quaternary InGaAsP / GaAs semiconductor materials is discussed and analyzed.
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