论文部分内容阅读
以In2O3和GeO2为原料,采用碳还原法制备了In2Ge2O7多晶薄膜,利用XRD和SEM对薄膜的结构和形貌进行了表征。对基于In2Ge2O7薄膜的金属-半导体-金属(MSM)紫外探测器进行了紫外光电导特性测量,结果显示:在波长为250nm的紫外光照射下,在5V偏压下,器件的光电流为727μA(暗电流为12μA),光响应度达到262.9A.W-1,光响应上升时间约为67s,下降时间约为15s。分析认为较长的响应时间是由于内部的缺陷与位错造成的。初步研究结果表明:In2Ge2O7薄膜可以作为一种良好的日盲紫外探测材料。
In2O3 and GeO2 as raw materials, In2Ge2O7 polycrystalline thin films were prepared by carbon reduction method. The structure and morphology of the films were characterized by XRD and SEM. The UV photoconductivity measurement of In2Ge2O7 thin film-based metal-semiconductor-metal (MSM) UV detector showed that the photocurrent of the device was 727μA under UV bias of 250nm Dark current is 12μA), the light responsivity reaches 262.9AW-1, the rise time of light response is about 67s, and the fall time is about 15s. Analysis shows that the longer response time is due to internal defects and dislocations. Preliminary results show that: In2Ge2O7 thin film can be used as a good day-blind UV detection material.