Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-I

来源 :电路与系统(英文) | 被引量 : 0次 | 上传用户：gzhguozhihong

【摘要】

：

The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primari

【作者】

：

Yasuhisa Omura Yukio Iida

【机构】

：

DepartmentofElectric

【出处】

：

电路与系统(英文)

【发表日期】

：

2013年2期

【关键词】

：

RF-ID Schenkel CIRCUIT SOI-MOSFET Quasi-Diode LOW-POWER RF-ID Schenkel Circuit S

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The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and

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Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-I

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