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实现二代高温超导产业化的关键之一是提高良率。作者在实践中发现,影响带材良率的一个重要因素是存在于带材上的缺陷。对二代高温超导带材中缺陷的研究应该是个一个重要的课题,但是还没有见到过有关的报道,该文对带材中大量出现的典型缺陷进行SEM和EDS分析发现,发现缺陷处有大量C元素,且该C元素存在于抛光基带和缓冲隔离层之间的界面上。由此,推测缺陷产生的根源是抛光带表面的有机物污染,并得到了证实。据此,在抛光工艺中的过滤系统得到了改进,最终良率得到了提高。同时,作者认为,使用SEM-EDS对缺陷进行元素分析,是二代带材开发生产中,对带材缺陷进行快速分析的一种可行方法。
One of the keys to realizing the industrialization of the second-generation high-temperature superconductor is to improve the yield. The author found in practice, an important factor affecting the strip yield is the existence of flaws on the strip. The research on defects in the second generation high temperature superconducting tapes should be an important issue, but no relevant reports have been seen yet. According to the SEM and EDS analysis of a large number of typical defects in the tapes, There are a large number of C elements present at the interface between the polishing substrate and the buffer spacer. Therefore, it is speculated that the root cause of defects is the pollution of the organic surface of the polishing belt, and has been confirmed. As a result, the filtration system in the polishing process has been improved and the final yield has been improved. At the same time, the author believes that the elemental analysis of defects by using SEM-EDS is a feasible method for rapid analysis of strip defects in the second generation of strip development and production.