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采用等离子体辅助分子束外延(PA-MBE)研究了Al金属插入层对Si(111)衬底上AlN薄膜材料生长的影响。结果证明,Al插入层可改善AlN外延层的晶体质量,而且引入Al预扩散机制可消除外延表面的孔隙。同时,采用AlN插入层预扩散有利于获得Al极性的AlN,否则倾向于获得N极性的AlN。
The effect of Al metal insertion layer on the growth of AlN thin films on Si (111) substrate was investigated by plasma-assisted molecular beam epitaxy (PA-MBE). The results show that the Al insertion layer can improve the crystal quality of the AlN epitaxial layer, and the introduction of Al pre-diffusion mechanism can eliminate the pores of the epitaxial surface. At the same time, pre-diffusion with AlN insertion layer favors obtaining AlN with Al polarity, otherwise it tends to obtain AlN with N polarity.