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在GaAs基片上实现的多级级联3dB耦合线开关反射式宽带单片数字移相器在相移精度、输入回损等关键性能上良好,但通常面积很大,而多级级联的高低通网络移相器面积较小而宽带性能较差。通过多节GaAspHEMT开关的组合改变3dB耦合线的直通端和耦合端的反射体的电长度,在6～18GHz的频率范围内实现不同的相移量。该结构只采用两级3dB耦合线结构级联,减小了芯片面积,减小了多节耦合线级联引入的寄生损耗。测试结果验证了结构的合理性:性能上与传统结构相当,但芯片面积缩小为50%～60%。
Multi-level Cascaded 3dB Coupling Line Switched Broadband Monolithic Digital Phase Shifter Implemented on GaAs Substrates Good performance in phase shift accuracy, input return loss and other key performance, but usually large area, but the level of multi-level cascade Through the network phase shifter smaller and broadband performance is poor. The combination of multi-segment GaAspHEMT switches changes the electrical length of the straight-through and coupled-end reflectors of the 3dB coupling line to achieve different amounts of phase shift in the 6-18 GHz frequency range. The structure only uses two-stage 3dB coupling line structure cascade, which reduces the chip area and reduces the parasitic loss introduced by multi-section coupling line cascade. The test results verify the rationality of the structure: the performance is equivalent to the traditional structure, but the chip area is reduced to 50% ~ 60%.