论文部分内容阅读
研究了不同阴离子(SO42-,CO32-,Cl-)对铝酸钠溶液深度脱硅的影响.通过对Na2SO4,Na2CO3和NaCl用量、反应温度、时间、Al2O3浓度、溶液苛性比ak、搅拌速度影响的考察,确定了最佳工艺条件.在95℃,Al2O3 150g/L,ak=1.5及搅拌速度867r/min条件下脱硅110min后,铝酸钠溶液中硅量指数达2938,在杂质用量30g/L时,含SO42-,CO32-,Cl-溶液的硅量指数分别可达3943,3545和3221.在阴离子浓度为0～70g/L时,SO42-促进溶液深度脱硅,CO32-,Cl-均先促进后抑制脱硅,通过硅渣XRD衍射分析,得到了SO42-,CO32-,Cl-对脱硅影响的变化规律.
The effects of different anions (SO42-, CO32-, Cl-) on the deep desilication of sodium aluminate solution were studied.The effects of Na2SO4, Na2CO3 and NaCl dosage, reaction temperature, time, Al2O3 concentration, solution caustic ratio ak, stirring speed , The optimum technological conditions were determined.The silicon content index of sodium aluminate solution reached 2938 at 95 ℃, Al2O3 of 150g / L, ak = 1.5 and stirring speed of 867r / min for 110min, / L, SO42-, CO32- and Cl- can reach as high as 3943, 3545 and 3221, respectively.When the anion concentration is 0 ~ 70g / L, SO42- - both promoted and then inhibited the desilication. The variation of SO42-, CO32- and Cl- on desilication was obtained by XRD analysis of silicon slag.