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制造高密度集成电路的关键之一是通过金属条的夹层介质台阶的形貌。因底层结构或通过腐蚀引起的这些台阶应逐渐倾斜以保证其后沉积的金属互连条的连续性。在器件可容温度下,对磷硅玻璃(PSG)或硼磷硅玻璃(BPSG)夹层介质进行回流就可得到斜削的台阶。已经用常压CVD,低压CVD,最近又用管形系统等离子增强CVD验证了PSG和BPSG沉积。在这篇报告中,我们论述了PSG和BPSG等离子增强沉积的工艺特征。采用平行平板冷壁等离子沉积系统。
One of the keys to making a high-density integrated circuit is the topography of the step through the interlayer of the metal strip. These steps should be gradually inclined due to the underlying structure or by corrosion to ensure the continuity of the subsequently deposited metal interconnects. Peeking steps can be obtained by reflowing the PSG or BPSG interlayer media at device-tolerant temperatures. PSG and BPSG deposition have been verified with atmospheric CVD, low pressure CVD, and more recently with tube-system plasma enhanced CVD. In this report, we discuss the process characteristics of PSG and BPSG plasma enhanced deposition. Parallel plate cold wall plasma deposition system.