论文部分内容阅读
本文介绍核电子学线路及核仪器中应用相当广泛的整流和开关二极管在中子辐射后性能的变化,即正向压降和反向电流增加。中子辐射在半导体材料产生缺陷的载流子去除效应及少数载流子寿命的减少是其主要的损伤机理。实验表明,硅整流二极管中子辐射容限在3×10~(12)～4×10~(13)n/cm~2;;硅开关二极管的中子辐射容限在5×10~(15)～3×10~(16)n/cm~2;锗、砷化镓开关二极管的中子辐射容限较硅器件要低。
This article describes the changes in the performance of a wide variety of rectifier and switching diodes used in nuclear electronics and in nuclear instrumentation after neutron radiation, ie, forward voltage drop and reverse current increase. It is the main damage mechanism of the carrier removal effect that the neutron radiation has a defect in the semiconductor material and the decrease of the minority carrier lifetime. The experimental results show that the neutron radiation tolerance of silicon rectifier diode is in the range of 3 × 10 ~ (12) ~4 × 10 ~ (13) n / cm ~ 2; the neutron radiation tolerance of silicon switching diodes is in the range of 5 × 10 ~ (15) ) ~ 3 × 10 ~ (16) n / cm ~ 2; germanium, gallium arsenide switching diode neutron radiation tolerance than silicon devices to be low.