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在20~80℃范围内连续工作条件下,非对称波导层结构的1.3μm AlInGaAs/AlInAs单量子阱激光器的特征温度为200K,这是目前国内报道的相同有源材料、相同发射波长的激光器中最高的特征温度值.因此AlInGaAs是长波长光纤激光器的理想有源区材料.研究表明非对称波导结构能降低光吸收,提高激光器的高温特性和COD阈值.
The characteristic temperature of 1.3μm AlInGaAs / AlInAs single quantum well laser with asymmetric waveguide layer structure is 200K under the continuous working condition of 20 ~ 80 ℃, which is the same active material and laser of the same emission wavelength Therefore, AlInGaAs is an ideal active material for long wavelength fiber lasers.It has been shown that asymmetric waveguide structures can reduce optical absorption and improve high temperature characteristics and COD threshold of lasers.