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基于标准CMOS工艺,可实现单结深光电二极管传感器(p+/n-well、n-well/p-sub和n+/p-sub)和双结深光电二极管传感器(p+/n-well/p-sub)。建立了双结深光电二极管传感器的光电响应数学模型,仿真了四种结构的光敏响应。采用上华0.5μm CMOS工艺实现了p+/nwell和p+/n-well/p-sub两种结构,传感面积为100μm×100μm。p+/n-well型结构在400nm波长,60lux光强下光电流为1.55nA,暗电流为13pA,p+/n-well/p-sub型结构在同等条件下光电流为2.15nA,暗电流为11pA。测试表明,设计的双结深光电传感器具有更高的灵敏度,可用于微弱的生物荧光信号检测。
Single-junction deep photodiode sensors (p + / n-well, n-well / p-sub and n + / p-sub) and double junction deep photodiode sensors sub). The photoelectric response mathematical model of double junction deep photodiode sensor was established and the photoresponse responses of the four structures were simulated. Two structures of p + / nwell and p + / n-well / p-sub are realized by using Shanghai Hua 0.5μm CMOS technology. The sensing area is 100μm × 100μm. The p + / n-well structure exhibited a photocurrent of 1.55 nA at 60 lux and a dark current of 13 pA at a wavelength of 400 nm. The photocurrent of the p + / n-well / p-sub structure was 2.15 nA under the same conditions and the dark current was 11pA. Tests show that the design of double junction deep photoelectric sensor with higher sensitivity, can be used for weak biofluorescence signal detection.