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通过离子注入及中子嬗变掺杂制备了Ga(镓)掺杂~(70)Ge(锗)纳米晶,并对样品进行了质子激发X射线荧光分析谱(PIXE)、光致发光谱(PL)、激光拉曼散射谱(LRS)的测量与研究。结果表明:随着Ga杂质浓度的增加,580 nm附近的荧光峰的发光强度不断地下降,这可能是非辐射的俄歇复合过程与纳米晶数量的减少共同作用的结果。此外,从PL上面看到580nm附近的荧光峰蓝移则可能是由纳米晶尺寸的减小和非辐射的俄歇复合过程引起的。
Ga (Ge) doped Ge 70 Ge (Ge) nanocrystals were prepared by ion implantation and neutron transmutation. The samples were characterized by X-ray fluorescence spectrometry (PIXE), photoluminescence ), Laser Raman scattering spectrum (LRS) measurement and research. The results show that with the increase of Ga impurity concentration, the luminescence intensity of the fluorescence peak near 580 nm declines continuously, which may be the result of non-radiation Auger recombination process combined with the decrease of the number of nanocrystals. In addition, the blue shift of the fluorescence peak near 580 nm seen from the PL may be caused by the reduction of nanocrystal size and the non-radiative Auger recombination process.