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本文用透射电镜（ＸＴＥＭ）和二次离子质谱（ＳＩＭＳ）分析了由超高真空化学气相淀积法（ＵＨＶＣＶＤ）生长的ｎ－Ｓｉ／ｉ－ｐ＋－ｉＳｉＧｅ／ｎ－Ｓｉ结构，发现在硅上外延生长ｉ－ｐ＋－ｉＳｉＧｅ时，在靠近Ｓｉ的ｉ／ｐ＋ＳｉＧｅ界面处存在一个很薄的层，但在ｉ－ｐ＋－ｉＳｉＧｅ上外延生长Ｓｉ时，无此现象产生．此薄层是由在硅上外延生长ｉ－ｐ＋－ｉＳｉＧｅ时硼原子聚集在靠近Ｓｉ的ｉ／ｐ＋ＳｉＧｅ界面处形成的高掺杂薄层．高掺杂的薄层影响由此结构制备的异质结双极晶体管（ＨＢＴ）的ＢＣ结的正向导通电压．
In this paper, the structure of n-Si / i-p + -iSiGe / n-Si grown by ultra high vacuum chemical vapor deposition (UHVCVD) was analyzed by transmission electron microscope (XTEM) and secondary ion mass spectrometry (SIMS) When i-p + -iSiGe is epitaxially grown, a very thin layer exists at the i / p + SiGe interface near Si, but this phenomenon does not occur when Si is epitaxially grown on i-p + -iSiGe. This thin layer is a highly doped thin layer formed by boron atoms agglomerating near the i / p + SiGe interface of Si when i-p + -iSiGe is epitaxially grown on silicon. Highly doped thin layers affect the forward turn on voltage of the BC junction of a heterojunction bipolar transistor (HBT) fabricated by this structure.