论文部分内容阅读
The high power EUV source is one of key issues in the development of EUV lithography which is con- sidered the most promising technology among the next generation lithography.However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product.So ECR plasma is proposed as a novel EUV light source.In order to investigate the feasibility of ECR plasma as an EUV light souree,the EUV power emitted by SECRAL was measured.An EUV power of 1.03 W in 4πsr solid angle was obtained with 2 000 W rf power,and the corresponding CE was 0.05%.
The high power EUV source is one of key issues in the development of EUV lithography which is con- sidered the most promising technology among the next generation lithography. Powered never DPP nor LPP seems to meet the requirements of the commercial high-volume product. ECR plasma is proposed as a novel EUV light source. In order to investigate the feasibility of ECR plasma as an EUV light souree, the EUV power emitted by SECRAL was measured. An EUV power of 1.03 W in 4πsr solid angle was obtained with 2 000 W rf power, and the corresponding CE was 0.05%.