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分析了ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓＨＢＴ外基区表面复合电流及外基区表面复合速度对直流增益的影响，用光致发光（ＰＬ）谱和Ａｌ／ＳｉＮｘ－Ｓ／ＧａＡｓＭＩＳ结构Ｃ－Ｖ特性，研究了ＧａＡｓ表面（ＮＨ４）２Ｓ／ＳｉＮｘ钝化工艺的效果及其稳定性。结果表明，ＥＣＲ－ＣＶＤ淀积ＳｉＮｘ覆盖并在Ｎ２气氛中退火有助于改善ＧａＡｓ表面硫钝化效果的稳定性。在此基础上形成了一套包括（ＮＨ４）２Ｓ处理、ＳｉＮｘＥＣＲ－ＣＶＤ淀积及退火并与现有ＨＢＴ工艺兼容的外基区表面钝化工艺，使发射区面积为４×１０μｍ２的器件增益比钝化前提高了４倍，且６０天内不退化。
The effect of recombination current on the outer base of AlxGa1-xAs / GaAs HBT and the recombination velocity on the surface of the outer base was analyzed. The photoluminescence (PL) spectra and C / V properties of Al / SiNx-S / Effect and Stability of GaAs Surface (NH4) 2S / SiNx Passivation Process. The results show that the deposition of SiNx by ECR-CVD and annealing in N2 atmosphere can help to improve the stability of sulfur passivation on GaAs surface. On the basis of this, a set of surface passivation technology of outer base region including (NH4) 2S, SiNxECR-CVD deposition and annealing and compatible with the existing HBT process is formed. The device gain ratio of the emitting area of 4 × 10μm2 4 times before passivation and no degradation within 60 days.