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本文根据MOS器件亚阈区转移特性国数强收敛的特点，提出了一种直接利用MOS器件转移特性确定亚阈区表面势的新方法．并讨论了界面馅饼的影响．研究结果表明，对于长沟器件，该方法的系统误差小于1．3％．与C－V法的对照实验表明，两者的结果偏差小于5％．
In this paper, a new method to directly use the transfer characteristics of MOS devices to determine the sub-threshold surface potential is proposed according to the strong convergence of the sub-threshold transfer characteristics of MOS devices. And discussed the impact of interface pie. The results show that the system error of this method is less than 1.3% for long channel devices. The comparison with the C-V method shows that the deviation between the two results is less than 5%.