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对常压烧结的 Ｓｉ Ｃ 陶瓷与 Ｔｉ Ａｌ 金属间化合 物进行了真空扩散连接。采用扫描电镜、电子探针和 Ｘ 射线衍射分析等手段确定了反应产物的种类和接头的界面结构，并用拉剪试验评价了接 头的连接强度。研究结果表明， Ｓｉ Ｃ 与 Ｔｉ Ａｌ 扩散连接中生 成了 Ｔｉ Ａｌ２ 、 Ｔｉ Ｃ 和 Ｔｉ５ Ｓｉ３ Ｃｘ 三种新相，接头的界 面结构为 Ｓｉ Ｃ／ Ｔｉ Ｃ／（ Ｔｉ Ｃ＋ Ｔｉ５ Ｓｉ３ Ｃｘ）／（ Ｔｉ Ａｌ２ ＋ Ｔｉ Ａｌ）／ Ｔｉ Ａｌ 。在１５７３ Ｋ 和１ ．８ ｋｓ 的连接条件下，接头室温剪切强度达到２４０ Ｍ Ｐａ ，高温（９７３ Ｋ） 剪切强度达到２３０ Ｍ Ｐａ 。
Atmospheric pressure sintering of Si C ceramics and TiAl intermetallics were vacuum diffusion bonded. The type of the reaction product and the interface structure of the linker were confirmed by means of scanning electron microscopy, electron probe and X-ray diffraction analysis, and the connection strength of the linker was evaluated by the tensile shear test. The results show that three new phases of TiAl2, TiC and Ti5Si3Cx are formed during the diffusion bonding between SiC and TiAl. The interface structure of the joint is SiC / TiC / (TiC + Ti5Si3Cx) / (TiAl2 + TiAl) / TiAl. At 1573 K and 1. Under 8 ks connection conditions, the joint shear strength reaches 240 M Pa at room temperature and 230 M Pa at high temperature (973 K).