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用TEM研究了经900℃,160或560分钟磷扩散退火后的富碳CZ单晶硅和EFG(Edge-defined Film-Fed Growth)硅带中的缺陷。除错配位错外,在上述两种材料的P—N结区,均观察到大量的沉淀粒子,但在体内区域未发现沉淀粒子。CZ单晶硅结区内的沉淀粒子尺寸比EFG硅带中的大,它可归结为CZ单晶硅中含氧量高,氧增加硅中自间隙原子浓度,从而促进了碳的沉淀。
The defects in carbon-rich carbon-carbon single-crystal silicon and EFG-ribbons after phosphorus diffusion annealing at 900 ℃ for 160 or 560 minutes were investigated by TEM. In addition to the mismatched dislocations, a large amount of precipitated particles were observed in the P-N junction region of the above two materials, but no precipitated particles were found in the in vivo region. The size of the precipitated particles in the CZ monocrystalline junction region is larger than that in the EFG silicon band, which can be attributed to the high oxygen content in CZ monocrystalline silicon and oxygen to increase the self-interstitial concentration in silicon, thereby promoting the precipitation of carbon.