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在过去几年内,外延HgCdTe已成为许多战略和战术成象系统所选用的红外探测器材料。一些作者报导了用以液相外延法制备的Hg_(1-x)Cd_xTe/CdTe异质结探测中红外波长(3～5μm)。成为Hg_(1-x)Cd_xTe外延层以合理成本生产的主要障碍是缺乏大的外延性质衬底。CdTe的金相与Hg_(1-x)Cd_xTe相容,因此,自然会选择它作为衬底材料。然而CdTe由于大单晶不易制取、机械强度低(易碎)和导热性差,它的优点被抵消。而且用当前最有效的布里奇曼法生长的材料,其结晶度和纯变也远不如Si或Ⅲ-Ⅴ
In the past few years, epitaxial HgCdTe has become the infrared detector material of choice for many strategic and tactical imaging systems. Some authors report the detection of mid-infrared wavelengths (3-5 μm) by Hg 1- (1-x) Cd x Te / CdTe heterostructures prepared by liquid-phase epitaxy. A major obstacle to becoming a Hg_ (1-x) Cd_xTe epitaxial layer at a reasonable cost is the lack of large epitaxial substrates. CdTe’s metallography is compatible with Hg_ (1-x) Cd_xTe, so it will naturally be chosen as the substrate material. However, CdTe is not easily prepared due to the large single crystal, its mechanical strength is low (brittle) and thermal conductivity is poor, its advantages are offset. And with the most efficient Bridgman method currently grown material, its crystallinity and pure change is far less than Si or Ⅲ-Ⅴ