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研制了双面硅条探测器。探测器灵敏面积为48mm×48mm,厚约300μm,结面和欧姆面的硅条互相垂直,均由相互平行、宽度相等的48条组成,每条宽0.9mm、间距0.1mm。对其电气特性(耗尽偏压、反向漏电流、条间电阻)和探测特性(上升时间、能量分辨、条间串扰)进行了测试。在偏压为-15V时,各条平均反向漏电流小于10nA。对于从结面入射的5.157 MeV的α粒子,前放信号上升时间约45ns,结面各条的能量分辨率约0.6%~0.7%,基本无条间串扰;欧姆面各条能量分辨率较差,存在条间串扰。
Developed double-sided silicon detector. The sensitive area of the detector is 48mm × 48mm and the thickness is about 300μm. The silicon surfaces of the junction surface and the ohmic surface are perpendicular to each other, and are composed of 48 parallel and equal widths, each having a width of 0.9mm and a pitch of 0.1mm. Its electrical characteristics (depletion bias, reverse leakage current, resistance between bars) and detection characteristics (rise time, energy resolution, crosstalk between bars) were tested. At a bias voltage of -15V, each average reverse leakage current is less than 10nA. For the 5.157 MeV α particles incident from the junction, the rise time of the preamplifier signal is about 45 ns, and the energy resolution of each of the junction surfaces is about 0.6% ~ 0.7%. The energy resolution of the ohmic surface is poor , There is cross-talk between bars.