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在体钨生长过程中使用原位氮等离子体处理成功实现了无孔洞钨填充.通过氮等离子体处理,钨转化成了氮化钨,其作为抑制剂引起结构顶部钨薄膜的生长延迟.因此,消除了结构顶部薄膜封口,并且实现了无孔洞的钨薄膜生长.使用扫描电子显微镜(SEM)表征钨薄膜的填充能力.结果 表明:开口有弓状形貌的结构,使用传统化学气相沉积(CVD)方式生长钨薄膜非常容易导致孔洞;而利用氮等离子体处理能够获得没有孔洞的钨填充.引入扫描透射电子显微镜(STEM)解释氮等离子体处理的机理,同时对体钨生长延迟时间与氮等离子体处理的时间、氮气体积流量、乙硼烷通气时间、体钨生长温度的关系进行了研究.“,”The void-free W gap fill was successfully achieved by using the in situ N plasma treatment during the bulk W deposition.With the N plasma treatment,W was transformed to WNx,acting as the inhibitor to induce the growth delay of structure top W film.Therefore,the structure overhang was eliminated and the void-free W film was obtained.The scanning electron microscope (SEM) was utilized to characterize the W gap fill performance.The result shows that with the opening-bowing structure,the conventional chemical vapor deposition (CVD) method for the growth of the W film easily leads to serious void;while in the case of applying the N plasma treatment,the W gap fill can get good performance without the void.To illustrate the N plasma treatment mechanism,the scanning transmission electron microscope (STEM) was introduced,and meanwhile the relationship between the bulk W deposition delay time and the N plasma treatment time,N2 volume flow rate,B2H6 flush time and bulk deposition temperature was investigated.