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采用分子束外延方法在GaAs(0 0 1)衬底上生长出了 0 3微米厚的GaN薄膜 ,X射线双晶衍射和室温光荧光测试结果表明 ,采用GaAs氮化表面作为成核层可获得高纯度立方GaN薄膜而采用AlAs氮化表面作为成核层可获得高纯度六方GaN薄膜 .这一研究结果表明在GaAs衬底上生长GaN薄膜的相结构可以通过选择不同的成核层来控制
ZnO thin films with a thickness of 0.3 μm were grown on GaAs (001) substrates by molecular beam epitaxy. The results of X-ray double crystal diffraction and room temperature optical fluorescence measurements show that the use of GaAs nitrided surface as nucleation layer High Purity GaN Films Using AlAs Nitrided Surfaces as Nucleation Layers High purity hexagonal GaN films were obtained.The results show that the phase structure of GaN films grown on GaAs substrates can be controlled by selecting different nucleation layers