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ISFET的发展情况国内已有报告。因此,本文仪对一九七五年以后ISFET的发展进行综述。如果说一九七五年前发现了离子敏感场效应管,那么,可以认为是Moss,Janata和Johnson在一九七五年把电化学活性材料(缬氨霉素/PVC)涂到ISFET的栅极表面上形成钾离子选择场效应管,才开创了ISFET的进一步发展基础。同年,Lundstrom等制成的钯栅氢敏场效应管,Shivaramau用氢敏管来探测H_2S,
The development of ISFET has been reported in China. Therefore, this article reviews the development of ISFETs after 1975. If ion-sensitive FETs were discovered before 1975, then it could be considered a Moss. Janata and Johnson coated the electrochemically active material (valinomycin / PVC) onto the ISFET gate in 1975 The formation of potassium ion selective field effect on the surface, it created a foundation for the further development of ISFET. In the same year, Lundstrom and other made palladium palladium hydrogen sensitive field effect tube, Shivaramau hydrogen sensitive tube to detect H_2S,