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采用矢量合成法设计了LiB3O5(LBO)晶体上1064 nm,532 nm二倍频增透膜,在1064 nm处的反射率为0.0014%,532 nm处的反射率为0.0004%。根据误差分析,薄膜制备时沉积速率精度控制在+6.5%时,1064 nm处的反射率增加至0.22%,532 nm处增加至0.87%。材料折射率的变化控制在+3%时,1064 nm处的反射率达0.24%,532 nm处达0.22%。沉积速率和折射率控制的负变化不增大特定波长处的剩余反射率。与膜层折射率相比,薄膜物理厚度对剩余反射率的影响小。低折射率膜层的厚度变化对特定波长处的剩余反射率影响最明显,即为该膜系的敏感层。为改善膜基之间的附着力,选择Y2O3或SiO2作为过渡层,从过渡层的厚度匹配和膜层的折射率匹配两方面进行了相应的膜系匹配设计。
The 1064 nm and 532 nm doubling antireflection coatings on LiB3O5 (LBO) crystal were designed by vector synthesis. The reflectivity was 0.0014% at 1064 nm and 0.0004% at 532 nm. According to the error analysis, when the deposition rate is controlled at + 6.5%, the reflectivity increases to 0.22% at 1064 nm and increases to 0.87% at 532 nm. When the refractive index of the material is controlled at + 3%, the reflectivity at 1064 nm reaches 0.24% and at 532 nm reaches 0.22%. Negative changes in deposition rate and refractive index control do not increase the residual reflectivity at a particular wavelength. The effect of the physical thickness of the film on the residual reflectance is small compared to the refractive index of the film. The change of the thickness of the low refractive index layer has the most obvious effect on the residual reflectance at a specific wavelength, which is the sensitive layer of the film system. In order to improve the adhesion between the film base, Y2O3 or SiO2 was selected as the transition layer, and the matching design of the film system was made from the matching of the thickness of the transition layer and the matching of the refractive index of the film layer.