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采用分子动力学模拟方法研究了入射能量对SiF2与SiC样品表面相互作用的影响。本次模拟选择的入射初始能量分别为0.3,1,5,10和25 eV。模拟结果显示SiF2分解率与Si和F原子的沉积率有密切的关系。沉积的Si和F原子在SiC表面形成一层SixFy薄膜。随入射能量的增加,薄膜厚度先增加后减小,薄膜中Si-Si键密度增大。构成薄膜的主要成分SiFx(x=1~4)中主要是SiF和SiF2,随入射能量的增加,薄膜成分由SiF2向SiF转变。
The influence of incident energy on the surface interaction between SiF2 and SiC samples was investigated by using molecular dynamics simulation. The initial energy of incidence of this simulation is 0.3, 1, 5, 10 and 25 eV, respectively. The simulation results show that the decomposition rate of SiF2 is closely related to the deposition rate of Si and F atoms. The deposited Si and F atoms form a SixFy film on the SiC surface. With the increase of incident energy, the film thickness first increases and then decreases, and the Si-Si bond density in the film increases. The main components of the film SiFx (x = 1 ~ 4) is mainly SiF and SiF2, with the incident energy increases, the film composition from SiF2 to SiF transformation.