论文部分内容阅读
本文给出了一个能满意地模拟 GaAs MESFET I-V 特性的器件沟道电流数学模型;编写了 GaAs 数字电路专用分析程序“TRANP”;对具有不同容值的 GaAs 电容前馈静态逻辑电路(FFSL 电路)进行了计算机模拟与实际电路制作,均表明电路中的前馈电容能减小电路的传输延迟时间;由实际制作的 GaAs FFSL 电路11级环型振荡器得到了单门传输延迟53.4ps的结果。
In this paper, we present a mathematic model of device channel current that can simulate the characteristics of GaAs MESFET IV satisfactorily. We also write “TRANP” program, a dedicated analysis program for GaAs digital circuits. For GaAs capacitive feedforward static logic (FFSL) circuits with different capacitance, Both computer simulation and actual circuit fabrication show that the feedforward capacitor in the circuit can reduce the transmission delay time of the circuit. The result of 53.4ps single-gate transmission delay is obtained from the fabricated 11-stage GaAs FFSL circuit ring oscillator.