We demonstrate that the electroluminescent performances of organic light-emitting diodes(OLEDs)are significantly improved by evaporating a thin F4-TCNQ film as
ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemical vapor deposition(MOCVD)technology.We used an un
screw-cone-like Zn2GeO4-ZnO particles with a base diameter of approximately 400 nm and a height of 400-800 nm or so were successfully synthesised by combustion
We propose a new modularity criterion in complex networks,called the unifying modularity q which is independent of the number of partitions.It is shown that,for
Beam dynamics and rf designs of a 104 MHz ladder type IH-RFQ (L-IH-RFQ) accelerator are finished at Peking University for the acceleration of 14C+ from 40 keV t
Al0.85In0.15N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOS-HEMTs)employing a 3-nm ultra-thin atomic-layer deposited(ALD)Al2O3 gate d
It has been recently reported that scale-free topology favors the detection of a weak signal because of the higher amplification at the hub node than that at ot