论文部分内容阅读
使用国产仪器、设备及材料,对钼中痕量杂质元素的光谱分析中各主要条件进行了试验与研究。确定直流电弧阳极激发,一次同时测定钠、镁、铝、铁、钴、镍、锰、铜、钛、钒、铬、硅、铅、铋、锡、锑、镉十七个杂质元素。测定下限为0.1～3ppm,测定下限总量为17.3ppm,单次测定标准偏差4.5～20%。实验部分1.仪器设备、材料及试剂光谱仪—WPG-100型平面光栅摄谱仪,一级光谱倒数线色散为8埃/毫米。光源—半导体硅整流设备GZH5-18型。电极—光谱纯石墨电极φ6毫米。
Using the domestic instruments, equipment and materials, the main conditions in the spectrum analysis of trace impurities in molybdenum were tested and studied. Determine the DC arc anodic excitation, simultaneous determination of seventeen impurity elements sodium, magnesium, aluminum, iron, cobalt, nickel, manganese, copper, titanium, vanadium, chromium, silicon, lead, bismuth, tin, antimony, cadmium. The lower limit of measurement is 0.1-3ppm, the lower limit of measurement is 17.3ppm, and the standard deviation of single measurement is 4.5-20%. Experimental part 1. Instruments, materials and reagents spectrometer-WPG-100 plane grating spectrograph, a spectral reciprocal line dispersion of 8 A / mm. Light source - semiconductor silicon rectifier equipment GZH5-18 type. Electrode - Spectrally pure graphite electrode φ6 mm.