论文部分内容阅读
根据IGBT的基本结构和工作原理,建立了一种新的IGBT三维热模型。运用基于有限元法的分析软件ANSYS,对功率分别为0.5 W、1.0 W、1.5 W、2.0 W条件下的器件热分布进行模拟分析。结果表明,热耦合加剧了器件的自升温,且功率越大,影响越明显。另外,考虑了热导率随温度变化情况下的器件热模拟结果显示:在相同的功率(1 W)条件下,器件最高温升高4.8 K。由模拟结果得到的热阻与红外实测结果基本一致。
According to the basic structure and working principle of IGBT, a new three-dimensional thermal model of IGBT is established. The finite element method based on the analysis software ANSYS was used to simulate the thermal distribution of the devices under the conditions of power of 0.5 W, 1.0 W, 1.5 W and 2.0 W respectively. The results show that the thermal coupling exacerbates the device self-heating, and the greater the power, the more obvious the impact. In addition, the thermal simulation of the device considering the change of the thermal conductivity with temperature shows that the maximum temperature of the device increases by 4.8 K at the same power (1 W). The simulation results obtained by the thermal resistance and infrared measurements are basically the same.