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索尼公司最近发展了一项制造高质量单晶硅的新方法——强磁场切克劳斯基法,简称MCZ法。该法最早由美国的空间实验为了试验硅以外的材料,在地面上试验无重力拉晶时发明的。MCZ法也可应用于拉制单晶硅。一般的CZ法拉制单晶硅时,由于产生热对流现象,硅的液面颤动,温度变化,难以得到均匀的单晶,而且石英坩埚与硅熔体起化学反应,大量的氧进入硅晶体,造成晶体缺陷和晶格畸变。
Sony recently developed a new method of making high-quality monocrystalline silicon - the strong magnetic Czochralski method, or MCZ for short. This method was first invented by the United States in space experiments to test materials other than silicon and tested on ground without gravity pulling. MCZ method can also be applied to drawing single crystal silicon. In general CZ pulling single crystal silicon, due to the phenomenon of thermal convection, the surface of the silicon jitter, temperature changes, it is difficult to get a uniform single crystal, and the quartz crucible and the silicon melt chemical reaction, a lot of oxygen into the silicon crystal, Cause crystal defects and lattice distortion.