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本文利用RHEED、X射线双晶衍射及TEM等技术，研究了在Si（001）衬底上，用晶化了的无定形Ge层做缓冲层MBE生长Ge时，引入表面活化剂Sb所产生的影响．研究表明，Sb的引入将会使Si（001）衬底上无定形Ge膜的晶化温度显著提高，并在一定的生长条件下，破坏Ge外延层的结晶性．
In this paper, by using RHEED, X-ray double crystal diffraction and TEM, we studied the effect of surface active agent Sb on Si (001) substrate when Ge was used as buffer layer MBE by crystallized amorphous Ge layer. influences. The results show that the introduction of Sb will significantly increase the crystallization temperature of the amorphous Ge film on the Si (001) substrate and destroy the crystallinity of the Ge epitaxial layer under certain growth conditions.