论文部分内容阅读
利用磁控溅射方法在玻璃基片上制备了F eCoS iB薄膜,溅射过程中施加一横向静磁场,并在真空中退火。实验结果表明,F eCoS iB的应力阻抗效应与制备工艺(工作气压、溅射磁场)和退火条件(退火温度、退火时间)有着非常密切的联系。当偏置磁场从60 O e增加到120 O e时,薄膜的应力阻抗从0.5%提高到了1.65%。在80 O e磁场下,薄膜经300℃、40 m in退火处理后,应力阻抗效应达1.86%。
F eCoS iB thin films were prepared on glass substrates by magnetron sputtering. A transverse static magnetic field was applied during sputtering and annealed in vacuum. The experimental results show that the stress-impedance effect of F eCoS iB is closely related to the preparation process (working pressure, sputtering magnetic field) and annealing conditions (annealing temperature, annealing time). When the bias magnetic field increases from 60 O e to 120 O e, the stress resistance of the film increases from 0.5% to 1.65%. Under 80 O e magnetic field, the stress-impedance effect reached 1.86% after annealed at 300 ℃ for 40 min.