本文论述了用于固态传感制备的〈100〉和〈110〉晶向硅片各向异性腐蚀的特点和机理;对掩模图形边缘取向和(100)硅矩形台而凸角处的削角现象进行了探讨;对各种各向异性腐蚀剂的配方与性能进行了对比;并列腐蚀残留物成分与形成条件进行了分析与研究。 In this paper, the characteristics and mechanism of anisotropic etching of <100> and <110> grain-oriented silicon wafers for solid-state sensing fabrication are discussed. The edge orientation of the mask pattern and the chamfer at the (100) Phenomena were discussed. The formulation and performance of various anisotropic etchants were compared. The composition and formation conditions of the corrosive residues were analyzed and studied.