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在正统理论的基础上 ,提出了单电子三势垒隧穿结模型的主方程 ,并用线性方程组解法求出了其稳态解 .通过数值模拟 ,得到了该系统的I V特性曲线 .发现其有别于双势垒隧穿结的情况 ,在传统库仑台阶的平台处曲线存在波纹状结构 ,分析得出这是由于第二个库仑岛上的电子数变化对I V曲线的影响 .此外 ,研究了各物理参数对I V曲线的影响 ,发现三结系统可以降低对温度的要求 ,并应用Fermi能级处的能级间隔估算出出现库仑台阶现象的最高温度Tmax,为相关单电子器件的参数选择提供了理论依据
Based on the orthodox theory, the main equation of single-electron triple-barrier tunneling junction model is proposed, and its steady-state solution is obtained by the linear equation solution method. The IV characteristic curve of the system is obtained by numerical simulation. Different from the case of double-barrier tunneling junction, the corrugated structure exists at the platform of traditional Coulomb steps, which is attributed to the influence of the number of electrons on the second Coulomb island on IV curve. In addition, The influence of each physical parameter on the IV curve was found and the triple junction system was found to reduce the temperature requirement. The maximum temperature Tmax of the Coulomb stepped phenomenon was estimated by the energy level interval at the Fermi level, which is the parameter choice of the related single-electron devices Provided a theoretical basis