本文利用５００ＭｅＶ的Ｎｅ离子对掺Ｚｎ的ＩｎＰ的半导体进行了辐照，并且ＭｏｎｔｅＣａｒｌｏ模拟及正电子湮没技术研究了辐照产生的缺陷．模拟计算结果表明，注入的Ｎｅ的离子及辐照产生的缺陷均主要集中在离子射程末端，由正电子寿命测量结果可知，在低剂量辐照时，产生的空位为单空位，当辐照齐量增大时，单空位由于相互聚合变成双空位及空位团，随着剂量进一步增大，还会形成无序的非晶层． In this paper, 500MeV Ne ions doped Zn-doped InP semiconductors were irradiated, and MonteCarlo simulation and positron annihilation technology to study the irradiation defects. The simulation results show that the ion implanted Ne ions and the defects caused by irradiation are mainly concentrated in the end of the ion beam range, from the positron lifetime measurement results show that in the low dose irradiation, the resulting vacancies single vacancy, when the radiation homogeneous As the amount increases, the single vacancies become double vacancies and vacancies due to mutual polymerization. As the dose is further increased, a disordered amorphous layer is formed.