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以反射延迟器代替1/4波片构成的反射式横向调制光学电压传感器结构紧凑,便于实际应用。对Bi4Ge3O12(BGO)晶体反射式横向调制光学电压传感器进行理论分析,分析表明:将待测电压加于BGO晶体<001>方向,且使光沿晶体<ī10>方向通过时,光学电压传感器具有较好的双光路温度互补特性,传感器具有最优性能。对2种不同结构的光学电压传感器进行温度试验,试验结果验证了理论分析的正确性。
The reflective transversal modulation optical voltage sensor, which is composed of reflective retarders instead of 1/4 wave plates, has a compact structure and is convenient for practical applications. The theoretical analysis of Bi4Ge3O12 (BGO) crystal transversal modulation optical voltage sensor shows that when the voltage to be measured is applied to the <001> direction of BGO crystal and the light passes along the <ī10> direction, the optical voltage sensor has better performance Good dual optical temperature complementary features, the sensor has the best performance. Two types of optical voltage sensors with different structures were tested for temperature. The experimental results verify the correctness of the theoretical analysis.