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[会议论文] 作者：CAO Xian-cun,ZHOU Chun-le,ZHANG Lin,SUN Di,CHONG Jing-min,FU Lu,LI Dong-ye,SUN Hong,
来源：中国病理生理学会心血管专业委员会第十五届学术大会暨国际心脏研究会中国分会第十二届学术大会 年份：2014
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,GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and charact
[期刊论文] 作者：Zhong Fei,Li Xin-Hua,Qiu Kai,Yin Zhi-Jun,Ji Chang-Jian,Cao Xian-Cun,Han Qi-Feng,Chen Jia-Rong,Wang Yu-Qi,
来源：中国物理（英文版） 年份：2007
GaN layers with different polarities have been prepared by radio-frequency molecular beam epitaxy (RF-MBE) and characterized by Raman scattering. Polarity contr...
[期刊论文] 作者：Qiu Kai,Zhong Fei,Li Xin-Hua,Yin Zhi-Jun,Ji Chang-Jian,Han Qi-Feng,Chen Jia-Rong,Cao Xian-Cun,Wang Yu-Qi,
来源：中国物理（英文版） 年份：2007
This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker fi...
[期刊论文] 作者：HAN Qi-Feng,DUAN Cheng-Hong,QIU Kai,JI Chang-Jian,LI Xin-Hua,ZHONG Fei,YIN Zhi-Jun,CAO Xian-Cun,ZHOU,
来源：中国物理快报（英文版） 年份：2007
Self-seeded aluminium nitride (AIN)crystals are grown in tungsten and hot pressed boron nitride(HPBN)crucibles With different shapes by a sublimation method.The...
[期刊论文] 作者：QIU Kai, YIN Zhi-Jun,LI Xin-Hua,ZHONG Fei,JI Chang-Jian,HAN Qi-Feng,CAO Xian-cun,CHEN Jia-Rong,LUO Xiang-Dong,
来源：中国物理快报（英文版） 年份：2007
The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5...
[期刊论文] 作者：,QIU Kai,LIU Gui-Feng,YIN Zhi-Jun,WANG Yu-Qi,LI Xin-Hua,JI Chang-Jian,HAN Qi-Fen,CHEN Jia-Rong,CAO Xian-Cun,
来源：中国物理快报（英文版） 年份：2006
We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of a...
,Effect of Ⅲ/Ⅴ Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Film
[期刊论文] 作者：ZHONG Fei,QIU Kai,LI Xin-Hua,YIN Zhi-Jun,XIE Xin-Jian,WANG Yang,JI Chang-Jian,CAO Xian-Cun,HAN Qi-Feng,
来源：中国物理快报（英文版） 年份：2007
We investigate the effect of Al/N ratio of the high temperature (HT) AlN buffer layer on polarity selection and electrical quality of GaN films grown by radio f...
,Theoretical Analysis of Current Crowding Effect in Metal/AlGaN/GaN Schottky Diodes and Its Reductio
[期刊论文] 作者：CHEN Jia-Rong,CHEN Wen-Jin,WANG Yu-Qi,QIU Kai,LI Xin-Hua,ZHONG Fei,YIN Zhi-Jun,JI Chang-Jian,CAO Xian-Cun,
来源：中国物理快报（英文版） 年份：2007
There exists a current crowding effect in the anode of A1GaN/GaN heteto junction Schottky diodes, causing local overheating when working at high power density,...
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